Enhanced Crystallinity, Bandgap Modulation, and Charge Carrier Dynamics in Thermally Decomposed ZnxNi(1-x)Fe2O4

Phongsaphat Rangdee, Pimjai Saengkwamsawang, Anurak Prasatkhetragarn, Arrak Klinbumrung, Wachirapun Juntrakul, Sakda Koenrobket

Abstract

This study investigates the crystallographic and electronic modifications induced by zinc doping in NiFe₂O₄ ferrites, Zn_xNi_(1-x)Fe₂O₄, which are synthesized through a sustainable thermal decomposition. Although NiFe₂O₄ is extensively studied for optoelectronic and catalytic applications, its performance is limited by defect-related charge recombination and conductivity. Here, the crystallographic and electronic properties are tailored through controlled Zn incorporation. By varying the zinc concentrations from x = 0 to 0.09, the samples were examined for their structural, optical, and charge transport behaviors using X-ray diffraction (XRD), photoluminescence (PL), ultraviolet-visible (UV-Vis) spectroscopy, and impedance analysis. At x = 0.03, crystallinity is enhanced, defect density is minimized, and charge carrier mobility is significantly improved. The bandgap narrowed from 1.62 eV (undoped) to 1.43 eV (x = 0.07), and resistance dropped from 1.507 × 10⁵ Ω to 0.378 × 10⁵ Ω, indicating better charge transportation. The results suggest that moderate Zn doping modifies the cation distribution and promotes defect stabilization, enabling enhanced visible-light absorption and improved electrical behavior. This study confirms the benefits of defect engineering through thermal decomposition, further work is necessary to evaluate long-term stability, magnetic properties, and integration for specific applications. Challenges still exist in optimizing multi-dopant systems for device-scale deployment.

Keywords

References

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DOI: 10.14416/j.asep.2025.11.007

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